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a75a1dec03
Add support for Dosilicon DS35Q1GA (3.3V) and DS35M1GA (1.8V) SPI NAND. These are 1Gbit (128MB) devices with: - 2048 byte pages + 64 byte OOB - 64 pages per block, 1024 blocks - On-die 4-bit ECC per 512 byte sector The 64-byte OOB area is divided into 4 segments of 16 bytes, with each segment containing 8 bytes of user data (M2+M1) and 8 bytes of ECC parity (R1). This provides 30 bytes of usable OOB space after reserving 2 bytes for the bad block marker. Tested on Genexis Platinum 4410 (EcoNet EN751221) by writing known patterns to OOB and verifying ECC parity placement in R1 regions. Datasheet: https://www.dosilicon.com/resources/SPI%20NAND/DS35X1GAXXX_rev08.pdf Signed-off-by: Ahmed Naseef <naseefkm@gmail.com> Signed-off-by: Miquel Raynal <miquel.raynal@bootlin.com>
6 lines
274 B
Makefile
6 lines
274 B
Makefile
# SPDX-License-Identifier: GPL-2.0
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spinand-objs := core.o otp.o
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spinand-objs += alliancememory.o ato.o dosilicon.o esmt.o fmsh.o foresee.o gigadevice.o
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spinand-objs += macronix.o micron.o paragon.o skyhigh.o toshiba.o winbond.o xtx.o
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obj-$(CONFIG_MTD_SPI_NAND) += spinand.o
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